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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB812 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) *High Power Dissipation *Complement to Type 2SD1032 APPLICATIONS *Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i UNIT -60 V -60 V -5 V -4 A -8 A 60 W .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICEO ICES hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -30mA; IB= 0 IC= -4A; IB= -0.4A B 2SB812 MIN -60 TYP. MAX UNIT V -1.5 -2.0 -700 -400 V V A A IC= -3A; VCE= -4V VCE= -30V; IB= 0 B VCE= -60V; VBE= 0 IC= -1A; VCE= -4V Switching times ton toff Turn-on Time Turn-Off Time hFE-1 Classifications R 40-90 Q 70-150 w ww sem isc . IC= -3A; VCE= -4V IC= -4A, IB1= -IB2= -0.4A .cn i 15 40 250 0.2 1.4 s s P 120-250 isc Websitewww.iscsemi.cn 2 |
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